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SFH482 Datasheet GaAlAs Infrared Emitters

Manufacturer: Siemens Semiconductor Group (now Infineon)

Overview: GaAlAs-IR-Lumineszenzdioden (880 nm) GaAlAs Infrared Emitters (880 nm) SFH 480 SFH 481 SFH 482 2.54mm spacing ø0.45 ø4.8 ø4.6 1 0.9 .1 Chip position (2.7) Cathode (SFH 480) Anode (SFH 216, SFH 231, SFH 400) Radiant Sensitive area ø5.6 ø5.3 5.3 14.5 5.0 12.5 7.4 6.6 Approx. weight 0.5 g GEO06314 ø0.45 (2.7) Chip position Anode = SFH 481 Cathode = SFH 401 (package) 1.1 .9 0 2.54 mm spacing welded 14.5 12.5 Approx. weight 0.35 g Chip position (2.7) ø0.45 5.5 5.0 14.5 12.5 5.3 5.0 ø5.6 ø5.3 GET06013 Approx. weight 0.5 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Semiconductor Group 1 1998-04-16 fet06092 Cathode (SFH 402, BPX 65) Anode (SFH 482) 2.54 spacing ø4.8 ø4.6 Radiant sensitive area 1.1 .9 0 1.1 0.9 fet06091 5.3 5.0 6.4 5.6 ø4.8 ø4.6 1 0.9 .1 ø5.6 ø5.3 GET06091 glass lens fet06090 1.1 .

Datasheet (PDF)

Key Features

  • q GaAIAs infrared emitting diode, fabricated in a liquid phase epitaxy process q Anode is electrically connected to the case q High reliability q Matches all Si-Photodetectors q Hermetically sealed package q SFH 480: Same package as SFH 216 q SFH 481: Same package as BPX 43, BPY 63 q SFH 482: Same package as BPX 38, BPX 65.

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